# 忆阻器

## 理论

${\displaystyle M(q)={\frac {\mathrm {d} \Phi _{\mathrm {B} }}{\mathrm {d} q}}}$

• 电阻${\displaystyle R(I)={\frac {\mathrm {d} V}{\mathrm {d} I}}}$
• 电感${\displaystyle L(I)={\frac {\mathrm {d} \Phi _{\mathrm {B} }}{\mathrm {d} I}}}$
• 电容${\displaystyle {\frac {1}{C(q)}}={\frac {\mathrm {d} V}{\mathrm {d} q}}}$

${\displaystyle V(t)=M(q(t))I(t)\,}$

${\displaystyle {\frac {1}{C}}={\frac {\mathrm {d} U}{\mathrm {d} q}}={\frac {\mathrm {d} {\dot {\Phi }}}{\mathrm {d} q}}}$

${\displaystyle R={\frac {\mathrm {d} U}{\mathrm {d} I}}={\frac {\mathrm {d} {\dot {\Phi }}}{\mathrm {d} {\dot {q}}}}}$

${\displaystyle M={\frac {\mathrm {d} \Phi }{\mathrm {d} q}}}$

${\displaystyle L={\frac {\mathrm {d} \Phi }{\mathrm {d} I}}={\frac {\mathrm {d} \Phi }{\mathrm {d} {\dot {q}}}}}$

## 实现

IntelMicron联合研发的3D XPoint。（Intel表示所用并不是ReRAM，根据推断，为相变存储器的可能性更大，此条消息存疑。）厂商表示，此技术的密度是DRAM的十倍、速度是NAND的千倍、写入次数为10,000,000次。

## 种类

### 固态

2007年惠普公司资讯与量子系统实验室的研究人员在理查德·斯坦利·威廉姆斯的领导下成功研制了固态的忆阻器－它是由一片双层的二氧化钛薄膜所形成，当电流通过时，其电阻值就会改变。固态的忆阻器的制造需要涉及物料的纳米技术。这个忆阻器并不像其理论般涉及磁通量，或如电容器般储存电荷，而是以化学技术来达至电阻电流历史改变的性质。

## 可能应用

Some patents related to memristors appear to include applications in programmable logic, signal processing, neural networks, and control systems.

## 参考

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